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ISM Pallets

 

The amplifier is designed for the L band operating at frequencies within 1030 to 1090 MHz as pulsed power amplification process. This unit employs solid state LDMOS transistor technology in order to obtain reliability and high efficiency. Typical Pulsed Performance provides 1kW peak with a repetition period of 100μsec and Duty Cycle of 2% max.

 

 

The unit is the RF amplifier basic block (pallet) including two 130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. The amplifier consists in two parallel stages coupled by means of the combining system fully integrated in the RF block, as well bias circuit. The block can operate both at 32Vdc or 36Vdc, and have an integrated attenuation circuit at adjust the power gain accordingly to the requested specs.

 

 

The 150W Carrier Power Amplifier it is a Class AB, Low Distortion, High Gain Linear amplifier module for the 100 ÷ 500MHz band. Superior performances are obtained using broadband matching techniques and the finest Gold LDMOS transistors available on the market today. Matched for 50 Ohms input and output, with Shutdown, Current Monitoring, and Temperature alarm the Broadband Amplifier it is suitable for AM communication application.

 

 

 

The PLT10-102S power amplifier operates at frequency of 310÷360MHz and it is rated for continuous duty at an RF output power of 1000 Watts. It is mainly designed as final power stage and it uses a single last generation LDMOS device capable of 1000 W RF output. The module is realized with a very compact layout to maximize the number of pallet in high power amplifiers and include the bias circuits, matching network and circuits for stabilization of the operating point. The configuration of the amplifier is a “push-pull” stage coupled by means of the combining network fully integrated in the RF block. This design allows obtaining broadband high efficiency and extremely low harmonic emissions.

 

 

The PLT11-122S power amplifier operates at frequency of 81,25 MHz and it is rated for continuous duty at an RF output power of 1200 Watts. It is mainly designed as final power stage and it uses a single last generation LDMOS device capable of 1200 W RF output. The module is realized with a very compact layout to maximize the number of pallet in high power amplifiers and include the bias circuits, matching network and circuits for stabilization of the operating point. The configuration of the amplifier is a “push-pull” stage coupled by means of the combining network fully integrated in the RF block. This design allows obtaining broadband high efficiency and extremely low harmonic emissions.

 

 

The PLT12-102S power amplifier operates at frequency of 162,50MHz and it is rated for continuous duty at an RF output power of 1000 Watts. It is mainly designed as final output. The module is realized with a very compact layout to maximize the number of pallet in high power amplifiers and include the bias circuits, matching network and circuits for stabilization of the operating point. The configuration of the amplifier is a “push-pull” stage coupled by means of the combining network fully integrated in the RF block. This design allows obtaining broadband high efficiency and extremely low harmonic emissions.

 

 

The PLT13-122S power amplifier operates at frequency of 41MHz and it is rated for continuous duty at an RF output power of 1200 Watts. It is mainly designed as final power stage and it uses a single last generation LDMOS device capable of 1200 W RF output. The module is realized with a very compact layout to maximize the number of pallet in high power amplifiers and include the bias circuits, matching network and circuits for stabilization of the operating point. The configuration of the amplifier is a “push-pull” stage coupled by means of the combining network fully integrated in the RF block. This design allows obtaining broadband high efficiency and extremely low harmonic emissions.

 

The PLT14-122S power amplifier operates at frequency of 27MHz and it is rated for continuous duty at an RF output power of 1200 Watts. It is mainly designed as final power stage and it uses a single last generation LDMOS device capable of 1200 W RF output. The module is realized with a very compact layout to maximize the number of pallet in high power amplifiers and include the bias circuits, matching network and circuits for stabilization of the operating point. The configuration of the amplifier is a “push-pull” stage coupled by means of the combining network fully integrated in the RF block. This design allows obtaining broadband high efficiency and extremely low harmonic emissions.